1N485B【PDF 1/2 页】DIODE SS 200V 200MA DO-35

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1N485B

?2003 Fairchild Semiconductor Corporation

1N485B, Rev. A

1N485B

Small Signal Diode

Absolute Maximum Ratings*

= 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

DO-35

Color Band Denotes Cathode

Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VRRM

Maximum Repetitive Reverse Voltage

200 V

IF(AV)

Average Rectified Forward Current 200 mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

4.0

Tstg

Storage Temperature Range -65 to +200

°C

Operating Junction Temperature 175

°C

Symbol

Parameter

Value

Units

Power Dissipation 500 mW

RθJA

Thermal Resistance, Junction to Ambient 300

°C/W

Symbol

Parameter

Test Conditions

Min

Max

Units

Breakdown Voltage

= 5

μA

200 V

Forward Voltage I

= 100 mA 1.0 V

Reverse Current V

= 175 V

= 175 V, T

= 150

°C

μA

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